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发明公开
CN102176439A 适于叠层半导体封装的半导体封装通过电极及半导体封装 失效 - 放弃专利权

适于叠层半导体封装的半导体封装通过电极及半导体封装
摘要：
本发明揭示一包括适合于一叠层半导体封装的通过电极以及一具有该电极的半导体封装。该半导体封装通过电极包括一具有凹槽部分的第一电极以穿过一半导体芯片。一第二电极配置于该第一电极的凹槽内。该半导体封装通过电极的第一电极包括一具有第一硬度的第一金属，该第二电极包括一具有低于第一硬度的第二硬度的第二金属。该通过电极穿过该半导体芯片体，并且可以由具有第一硬度和/或第一熔点的第一金属和具有低于第一硬度和/或第一熔点的第二硬度和/或第二熔点的第二金属形成。该通过电极能使数个半导体封装轻易地堆栈。
摘要（英）：

A semiconductor package including a through-electrode for stacked a semiconductor package and a semiconductor package having the same is disclosed. The semiconductor package through-electrode includes a first electrode having a recessed portion formed therein to pass through a semiconductor chip. A second electrode is disposed within the recess of the first electrode. The first electrode of the semiconductor package through-electrode includes a first metal having a first hardness, and a second electrode comprises a second metal having a second hardness lower than the first hardness. The through-electrode passes through the semiconductor chip body and may be formed with the first metal having the first hardness and/or a first melting point and the second metal having the second hardness and/or a second melting point which are lower than the first hardness and/or the first melting point. This through-electrode allows a plurality of semiconductor packages to be easily stacked.

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