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发明公开
CN102214626A 内埋式半导体封装件及其制作方法 有权

内埋式半导体封装件及其制作方法
摘要：
本发明公开一种内埋式半导体封装件及其制作方法，该半导体封装件包括具有电性接点的半导体元件、上方图案化导电层、介于上方图案化导电层与半导体元件之间的介电层、第一内层电性连接层、下方图案化导电层、导通孔以及第二内层电性连接层。介电层具有暴露出电性接点的第一开口以及从下方图案化导电层延伸至上方图案化导电层的第二开口。第一内层电性连接层从电性接点延伸至上方图案化导电层且填充于第一开口中。第二开口具有暴露出上方图案化导电层的上部分以及暴露出下方图案化导电层的下部分。导通孔位于第二开口的下部分。第二内层电性连接层填充于第二开口的上部分。
摘要（英）：

The present invention discloses a built-in type semiconductor package and a manufacturing method thereof. The semiconductor package includes a semiconductor element with electric contacts, an upper patterned conductive layer, a conductive layer arranged between the upper patterned conductive layer and the semiconductor element, a first inner electrical connection layer, a lower patterned conductive layer, a through hole and a second inner electrical connection layer. The conductive layer is equipped with a first opening exposed out of the electric contacts and a second opening. The first inner electrical connection layer extending from the electric contacts to the upper patterned conductive layer is filled inside the first opening. The second opening is equipped with an upper part exposed out of the upper patterned conductive layer and a lower part exposed out of the lower patterned conductive layer. The through hole is arranged at the lower part of the second opening. The second inner electrical connection layer is filled inside the upper part of the second opening.

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