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CN102226295A 一种四元化合物分子束外延组分控制参数设计的方法 无效 - 驳回

一种四元化合物分子束外延组分控制参数设计的方法
摘要：
本发明涉及一种四元化合物分子束外延组分控制参数设计的方法，包括：(1)利用标定生长试验获得四元化合物材料组分与束源束流强度的关系式；(2)根据组分与束源束流强度的关系来设计生长所需组分材料的生长参数。本发明为分子束外延生长四元化合物半导体的组分调节提供了依据，方便地设计生长参数，实现对包含三种同族元素的四元化合物半导体组分的精确控制，提高新组分外延材料生长的效率。本发明适合于不同的材料体系，具有很好的通用性。
摘要（英）：

The invention relates to a method for designing the control parameters of the quaternary compound molecular beam epitaxy components. The method comprises the following steps: (1) a calibration growth test is utilized to obtain the relationship between the components of the quaternary compound material and the beam current intensity of the beam source; and (2) according to the relationship between the components and the beam current intensity of the beam source, the growth parameters of the required material are designed. The invention provides an evidence for the component adjustment of the quaternary compound semiconductor prepared through molecular beam epitaxial growth; and the growth parameters are convenient to design, the components of the quaternary compound semiconductor containing three elements in the same family can be controlled accurately and the growing efficiency of the epitaxial material with new components can be increased. The method is suitable for different material systems and has very good universality.

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