The invention discloses a manufacturing method of a gallium nitride light-emitting diode. Through epitaxial growth in two times, an inversed hexagonal pyramid coarsening epitaxial layer belt is placed in an inside structure of a gallium nitride light-emitting diode chip. A primary epitaxial growth coarsening layer is used as a coarsening medium, wet-process etching can be used for etching a coarsening edge part close to a lateral etching channel into an inversed hexagonal pyramid topographic belt through the lateral etching channel positioned inside the chip, and then each light-emitting chipis internally provided with one or more inversed hexagonal pyramid topographic belts through enabling a light-emitting layer to grow in a secondary epitaxial growth manner and manufacturing an electrode. Therefore, the coarsening region area is further enlarged on the basis of coarsening the original cutting street in an inversed hexagonal pyramid manner, and light extraction efficiency is furthest increased.