The invention discloses a magneto-resistance angular sensor that employs a magnetic tunnel junction (MTJ) element or a GMR element. An output of a magneto-resistance angular sensor is a voltage signal that is in a sine or a cosine relationship with a magnetic field angle. A magnetic field can be provided by a small magnetic block that is right above the sensor and is used for detecting two orthogonal magnetic-field components. The angular sensor is composed of a pair of full bridges that have two orthogonal sensitive axises. And the sensor can be arranged side by side or can be arranged into a mode that the orthogonal sensor have a shared center. A small element block of the sensor is bonded and connected by a packaging lead; meanwhile, the sensor can be packaged into various standard semiconductor packaging modes or into a low-cost semiconductor packaging mode.