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发明公开
CN102313849A 氧化物半导体薄膜的评价方法及氧化物半导体薄膜的质量管理方法 有权

氧化物半导体薄膜的评价方法及氧化物半导体薄膜的质量管理方法
摘要：
本发明提供一种氧化物半导体薄膜的评价方法及氧化物半导体薄膜的质量管理方法，其为不带电极而是通过非接触型来评价、测定氧化物半导体薄膜的电特性的方法。对形成有氧化物半导体薄膜的试样照射激励光及微波，在测定因上述激励光的照射而发生变化的上述微波的来自上述氧化物半导体薄膜的反射波的最大值之后，停止上述激励光的照射，并测定上述激励光的照射停止后的上述微波的来自上述氧化物半导体薄膜的反射波的反射率的变化，根据上述测定的值算出寿命值，由此判定上述氧化物半导体薄膜的迁移率。
摘要（英）：

The invention provides a method for estimating oxide semiconductor thin films and a method for managing the quality of oxide semiconductor thin films. The methods are applied for estimating and determining the electrical performances of the oxide semiconductor thin films in a non-contact and electrode-free way. The method comprises the steps of irradiating exciting light and microwave on samples equipped with oxide semiconductor thin films; stopping the irradiation of the exciting light after achieving the maximum value of the reflecting wave of the microwave from the oxide semiconductor thin film which is changed due to the irradiation of the exciting light; detecting the change of the reflectivity of the reflecting wave of the microwave from the oxide semiconductor thin film after the irradiation of the exciting light is stopped; and determining the mobility of the oxide semiconductor thin film according to the calculated service lifetime value derived from the detected value.

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