The invention provides a high-quality SGOI (SiGe-on insulator) produced by utilizing a material with a superlattice structure and a production method of the high-quality SGOI. The production method comprises the steps of: first, periodically and alternately growing a Ge layer (Si layer) and a Si1-xGex layer on a substrate to form the superlattice structure; afterwards, growing a Si1-mGem materialat a low temperature, and controlling the thickness of an epitaxial layer to be less than a critical thickness; subsequently, performing an annealing treatment or ion injection and annealing treatments on a sample so as to facilitate the relaxation of the Si1-mGem material at the top layer; finally, transferring the Si1-mGem material at the top layer and the superlattice structure to a support material with a SiO2/Si structure by employing an intelligent peeling method so as to form a multilayer material; and producing the high-quality SGOI by using a grinding or CMP (Corrugated Metal Pipe) method. Therefore, the SGOI with high quality, low cost, low defect and controllable thickness is produced by utilizing the material with the superlattice structure.