The invention relates to a transparent conducting layer-based black silicon solar cell. A structural layer of the black silicon solar cell comprises a silver anti-oxidation layer, an aluminum conducting layer, a P type silicon layer, a black silicon absorption layer and an indium tin oxide (ITO) transparent conducting layer, wherein the aluminum conducting layer is a positive electrode of the solar cell, and the ITO transparent conducting layer is a negative electrode of the solar cell. A preparation method for the transparent conducting layer-based black silicon solar cell comprises the following steps of: cleaning the P type silicon layer; preparing the aluminum conducting layer on one surface of the P type silicon layer by a direct-current sputtering method; preparing the silver anti-oxidation layer below the aluminum conducting layer by an ion beam sputtering method; putting a prepared sample into a sealing cavity, and machining the black silicon absorption layer on the surface, which is not subjected to film plating, of the P type silicon layer by using a femtosecond laser; putting the sample into a tubular atmosphere furnace, and annealing; and preparing the ITO transparent conducting layer above the black silicon absorption layer by the ion beam sputtering method. By the transparent conducting layer-based black silicon solar cell, the loss of energy transfer on the surface of the black silicon absorption layer can be reduced effectively, and the energy conversion efficiency of the black silicon solar cell can be improved substantially.