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发明公开
CN102379044A 光电转换装置 无效 - 撤回

光电转换装置
摘要：
本发明提供具备使反射特性最优化的中间接触层的光电转换装置。光电转换装置(100)在基板(1)上具备在基板(1)的相反侧的表面具备凹凸结构的透明电极层(2)、由两个发电层(91、92)构成的光电转换层(3)、背面电极层(4)、设于两个发电层(91、92)之间的中间接触层(5)，中间接触层(5)从基板(1)侧起依次包含以氧化钛为主的氧化钛膜、和以透明导电性氧化物为主的背面侧透明导电膜，氧化钛膜的膜厚在由以下所示的区域的范围内：背面侧透明导电膜的膜厚为5nm时为65nm以上且110nm以下；背面侧透明导电膜的膜厚为10nm时为65nm以上且95nm以下；背面侧透明导电膜的膜厚为15nm时为65nm以上且90nm以下；背面侧透明导电膜的膜厚为20nm时为60nm以上85nm以下；背面侧透明导电膜的膜厚为25nm时为55nm以上且70nm以下；以及背面侧透明导电膜的膜厚为30nm时为55nm以上且65nm以下。
摘要（英）：

Provided is a photoelectric conversion device provided with an intermediate contact layer, the reflection characteristics of which are optimized. A photoelectric conversion device (100) is provided with a transparent electrode layer (2) which is provided on a substrate (1) and which is provided with an uneven structure on a surface opposite to the substrate (1), a photoelectric conversion layer (3) comprised of two power generation layers (91, 92), an underside electrode layer (4), and an intermediate contact layer (5) provided between the two power generation layers (91, 92). The intermediate contact layer (5) is comprised of a titanium oxide film mainly composed of titanium oxide, and an underside transparent conductive film mainly composed of transparent conductive oxide, in this order from the substrate (1) side. The thickness of the titanium oxide film is in a range of 65-110 nm inclusive when the thickness of the underside transparent conductive film is 5 nm, and likewise, 65-95 nm inclusive when 10 nm, 65-90 nm inclusive when 15 nm, 60-85 nm inclusive when 20 nm, 55-70 nm inclusive when 25 nm, and 55-65 nm inclusive when 30 nm.

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