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CN102394104A 用于可编程逻辑器件集成电路的带有提高的供电电平的易失性存储器单元 有权 转让

用于可编程逻辑器件集成电路的带有提高的供电电平的易失性存储器单元
摘要：
提供具有易失性存储器单元的集成电路。这些存储器单元产生输出信号。这些集成电路可能是含有可编程核心逻辑的可编程逻辑器件集成电路，该可编程核心逻辑包含带有栅极的晶体管。使用核心逻辑供电电平为核心逻辑供电，该核心逻辑供电电平由核心逻辑正供电电压和核心逻辑接地供电电压限定。当装载了配置数据时，这些存储器单元产生输出信号，这些输出信号被施加于核心逻辑中的晶体管的栅极以定制该可编程逻辑器件。使用存储器单元供电电平为存储器单元供电，该存储器单元供电电平由存储器单元正供电电压和存储器单元接地供电电压限定。该存储器单元供电电平相对于该核心逻辑供电电平被提高。
摘要（英）：

Integrated circuits are provided that have volatile memory elements. The memory elements produce output signals. The integrated circuits may be programmable logic device integrated circuits containing programmable core logic including transistors with gates. The core logic is powered using a core logic power supply level defined by a core logic positive power supply voltage and a core logic ground voltage. When loaded with configuration data, the memory elements produce output signals that are applied to the gates of the transistors in the core logic to customize the programmable logic device. The memory elements are powered with a memory element power supply level defined by a memory element positive power supply voltage and a memory element ground power supply voltage. The memory element power supply level is elevated with respect to the core logic power supply level.

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