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发明公开
CN102443852A 一种锰掺杂的钛酸铋钠-钛酸钡无铅压电单晶及其制备方法 无效 - 撤回

一种锰掺杂的钛酸铋钠-钛酸钡无铅压电单晶及其制备方法
摘要：
本发明属于晶体生长领域，涉及一种锰掺杂的钛酸铋钠-钛酸钡无铅压电单晶及其制备方法。本发明的锰掺杂的钛酸铋钠-钛酸钡无铅压电单晶，其化学成份符合化学组成式(1-x)Na0.5Bi0.5TiO3-xBaTiO3-yat%Mn，其中0＜x＜1，0.1≤y≤0.4，yat%代表Mn占(1-x)Na0.5Bi0.5TiO3-xBaTiO3的摩尔百分比。本发明采用顶部籽晶助熔剂提拉法生长Mn掺杂的NBBT无铅压电单晶，其压电常数d33达到500pC/N，机电耦合系数kt达到60%，已达到了使用水平，可广泛用于高频超声换能器、工业探伤及医用超声工程等领域。
摘要（英）：

The invention belongs to the field of crystal growth and relates to a manganese-doped sodium bismuth titanate-barium titanate lead-free piezoelectric single crystal and a preparation method thereof. The chemical components of the manganese-doped sodium bismuth titanate-barium titanate lead-free piezoelectric single crystal meet the following chemical composition formula: (1-x)Na[0.5]Bi[0.5]TiO[3]-xBaTiO[3]-yat%Mn, wherein x is more than 0 and less than 1.0, y is larger than or equal to 0.1 and less than or equal to 0.4, yat% represents the molar percentage of Mn accounting for (1-x)Na[0.5]Bi[0.5]TiO[3]-xBaTiO[3]. In the invention, the Mn-doped NBBT (sodium bismuth titanate-barium titanate) lead-free piezoelectric single crystal is grown by adopting a top seed crystal flux pulling technique, the piezoelectric constant d33 of the single crystal reaches 500pC/N, and the electromechanical coupling coefficient kt reaches 60%, thus the manganese-doped sodium bismuth titanate-barium titanate lead-free piezoelectric single crystal reaches a use level, can be applied to the fields of high-frequency ultrasonic transducers, industrial fault detection, medicine ultrasonic projects and the like.

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