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CN102545554A 一种基于IGBT与SiC雪崩二极管反并联的串联电路 无效 - 驳回 转让

一种基于IGBT与SiC雪崩二极管反并联的串联电路
摘要：
本发明提供一种基于IGBT(2)与SiC雪崩二极管(3)反并联的串联电路(1)，所述串联电路(1)包括串联的IGBT(2)及其相应的SiC雪崩二极管(3)，IGBT(2)反并联于其相应的SiC雪崩二极管(3)。本发明提供的一种基于IGBT与SiC雪崩二极管反并联的串联结构，SiC雪崩二极管对IGBT的过压抑制措施，避免了在多个IGBT串联中使用复杂的门极驱动控制和dv/dt控制，在不降低装置安全和可靠性能的前提下，降低了成本。
摘要（英）：

The invention provides a series circuit based on the inverse parallel of an insulated gate bi-polar transistor (IGBT) and a silicon carbide (SiC) avalanche diode; the series circuit (1) comprises an IGBT (2) and the corresponding SiC avalanche diode (3) which are serially connected; and the IGBT (2) is in inverse parallel with the corresponding SiC avalanche diode (3). According to a series structure based on the inverse parallel of the IGBT and the SiC avalanche diode, the overvoltage suppression measures of the SiC avalanche diode to the IGBT prevent the use of complicated gate driving control and dv/dt control in a plurality of IGBT series, so that the cost is reduced on the premise that the safety and the reliability of the device are not reduced.

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