The invention relates to a systematic characterization method for the relation between the defects of photovoltaic detection materials and the performance of devices, which includes the following steps: according to the variety and characteristics of a photovoltaic detection material, a test chip is designed and packaged to form a test sample; the photoelectric characteristics of the test sample are measured and characterized; on the same test sample, an electron beam-induced current/scanning electron microscope or cathodoluminescence/ scanning electron microscope combination-combined method is used for carrying out the measurement, characterization and statistical analysis of performance-related defects; and according to the directly related test characterization result obtained in the previous step, systematic characterization is carried out on the relation between the defects of the material and the performance of the device. The systematic characterization method can prevent the problems of uncertainty and randomness existing in the relation between the performance of the device made from the material and the measured defects of the material.