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发明公开
CN102687259A 半导体用铜接合线及其接合结构 有权 转让

半导体用铜接合线及其接合结构
摘要：
本发明的目的是提供一种材料费便宜，与Al电极的接合部的长期可靠性优异，在车载用LSI用途中也能够应用的接合结构、以及半导体用铜接合线。形成将在铜接合线的尖端形成的球部与铝电极接合了的球接合部，所述的将在铜接合线的尖端形成的球部与铝电极接合了的球接合部，其特征在于，在将所述球接合部在130~200℃的任一温度下加热后，相对于在所述球接合部的截面中具有的由Cu和Al构成的金属间化合物的厚度，CuAl相的金属间化合物的厚度的比例即相对化合物比率R1为40%~100%。
摘要（英）：

Disclosed is a bonding structure, which has a low material cost and excellent long-term reliability of a portion bonded to an Al electrode, and is applicable to in-vehicle LSI. Also disclosed is a copper bonding wire for semiconductor. A ball-bonded section is formed by bonding, to an aluminum electrode, a ball section formed on the leading end of the copper bonding wire. After heating the ball-bonded section at a temperature of 130-200 DEG C, the relative compound ratio (R1), which is the ratio of the thickness of the intermetallic compound in the CuAl phase to the thickness of the intermetallic compound, which is in the cross-section of the ball-bonded section and is composed of Cu and Al, is 40-100 %.

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