Disclosed is a photoelectric transducer (1) provided with a photoelectric conversion layer (2) and a photonic crystal formed in the photoelectric conversion layer (2) so that the photonic crystal has a photonic bandgap, wherein the photonic crystal includes nanorods (30) having a lower refractive index than the medium of the photoelectric conversion layer (2) and arranged in the photoelectric conversion layer (2) at intervals, wherein a defect (31) is formed in the photonic crystal so that a defect level is formed in the photonic bandgap, wherein the nanorods (30) are two-dimensionally arranged with a pitch of lambda/7 or more and lambda/2 or less, where lambda is the resonance peak wavelength corresponding to the defect level, and wherein a coefficient k[V] indicating the coupling strength between the photonic crystal and the surroundings thereof is approximately equal to the optical absorption coefficient a of the photoelectric conversion layer (2).