利索-全球专利检索

  1. 登录
  2. 注册
发明授权
CN102753723B 等离子体蚀刻处理工具和蚀刻处理方法 有权

等离子体蚀刻处理工具和蚀刻处理方法
摘要：
本发明涉及一种等离子体蚀刻处理工具。所述的等离子体蚀刻处理工具包括：衬底支撑件，用于支撑具有衬底表面面积的衬底；处理头，包括具有朝向所述衬底支撑件上方的开口侧的等离子体微型腔室，等离子体微型腔室的所述开口侧具有小于所述衬底表面面积的处理面积；密封结构，被限定于所述衬底支撑件和所述处理头之间；以及电源，被连接到所述等离子体微型腔室和所述衬底支撑件。本发明还涉及一种等离子体蚀刻处理方法。
摘要（英）：

A plasma etch processing tool is disclosed. The plasma etch processing tool, comprising a substrate support for supporting a substrate having a substrate surface area, a processing head including a plasma microchamber having an open side that is oriented over the substrate support, the open side of the plasma microchamber having a process area that is less than the substrate surface area, a sealing structure defined between the substrate support and the processing head and a power supply connected to the plasma microchamber and the substrate support. A method for performing a plasma etch is also disclosed.

公开/授权文献
0/0