The invention discloses a method for manufacturing a film gallium nitride (GaN) chip based on sapphire stripping, relates to a preparing technology of semiconductor luminescent devices, and solves the problem of epitaxial thin film rupture during a process of stripping a sapphire substrate. The method includes etching an epitaxial layer on the sapphire substrate, preparing a reflecting layer material on the etched epitaxial layer, performing alloying, bonding with a permanent support basal plate, curing the other side of the permanent support basal plate and a second basal plate through resins, stripping the sapphire substrate through lasers, removing the second basal plate and the resins after the stripping, or removing the second basal plate before the laser stripping. The method has the advantage that the rate of finished products of the GaN film chip can be improved.