The invention provides a resistance type random access memory with high stability and a preparation method for the resistance type random access memory. The memory comprises an insulating substrate, a first electrode, an intermediate layer and a second electrode, wherein the first electrode is positioned on the upper surface of the insulating substrate; the intermediate layer is positioned on the upper surface of the first electrode; the second electrode is positioned on the upper surface of the intermediate layer; the upper surface of the intermediate layer is provided with an inner-concave structure of which the bottom end is tip-shaped; an outer-convex structure which is matched with the inner-concave structure and of which the bottom end is tip-shaped is arranged at a position where the lower surface of the second electrode is opposite to the inner-concave structure; an electric field with local enhancement is formed by the outer-convex structure according to point discharge effect when voltage is applied between the first electrode and the second electrode, and charged defect particles are gathered in the outer-convex structure; a conductive channel is finally formed near the outer-convex structure; and therefore, a position of the conductive channel formed between the first electrode and the second electrode can be effectively controlled by the memory, so that the stability of the device is improved.