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CN102867795A 半导体器件及制造该半导体器件的方法 无效 - 撤回

半导体器件及制造该半导体器件的方法
摘要：
本发明提供了一种半导体器件及制造该半导体器件的方法，所述半导体器件具有供应大电流的第一通路和第一互连，其中具有第一通路和第一互连的第一表面是平坦的。该半导体器件具有：第一通路，其从第一衬底的第一表面穿透第一衬底；和第一互连，其掩埋在第一衬底的第一表面中且与至少一个第一通路的一端连接。第一通路具有倾斜部分，在该倾斜部分中，形成在第一通路的侧面和第一通路的底部之间的角度大于形成在第一互连的侧面和第一互连的底部之间的角度。
摘要（英）：

A semiconductor device having a first via and a first interconnect supplying a high current is provided in which a first surface having the first via and the first interconnect is planar. The semiconductor device has a first via penetrating a first substrate from a first surface of the first substrate and a first interconnect buried in the first surface of the first substrate and connected with one end of at least one first via. The first via has an inclined portion where an angle formed between a lateral side of the first via and the bottom of the first via is larger than an angle formed between a lateral side of the first interconnect and the bottom of the first interconnect.

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