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CN102867843A 隔离的晶体管和二极管、用于半导体管芯的隔离和终端结构 失效 - 权利终止

隔离的晶体管和二极管、用于半导体管芯的隔离和终端结构
摘要：
各种集成电路器件，尤其是晶体管，形成在包括底隔离区域和从所述衬底的表面延伸到该底隔离区域的沟槽的隔离结构内部。该沟槽可由电介质材料填充或可以具有在中心部分的导电材料以及装衬该沟槽的壁的电介质材料。通过延伸该底隔离区域超出沟槽、采用保护环以及形成漂移区的用于终端所述隔离结构的各种技术被描述。
摘要（英）：

Various integrated circuit devices, in particular a transistor, are formed inside an isolation structure which includes a floor isolation region and a trench extending from the surface of the substrate to the floor isolation region. The trench may be filled with a dielectric material or may have a conductive material in a central portion with a dielectric layer lining the walls of the trench. Various techniques for terminating the isolation structure by extending the floor isolation region beyond the trench, using a guard ring, and a forming a drift region are described.

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