This invention provides an APD which can reduce a dark current derived from a mesa surface and a shape of an electrode layer. An APD 301 is provided with a semi-insulating substrate 1, a first mesa 101 having a first laminate constitution in which a p-type electrode layer 2, a p-type light absorbing layer 3A, a light absorbing layer 3B with a low impurity concentration, a band gap inclined layer 4, a p-type electric field control layer 5, an avalanche multiplier layer 6, an n-type electric field control layer 7A, and an electron transit layer 7B with a low impurity concentration are stacked in this order on a surface of the semi-insulating substrate 1, a second mesa 102 having an outer circumference provided inside an outer circumference of the first mesa 101 as viewed from the laminating direction and having a second laminate constitution in which an n-type electrode buffer layer 8A and an n-type electrode layer 8B are stacked in this order on a surface on the electron transit layer 7B side of the first mesa 101, and in the APD, a total donor concentration of the n-type electric field control layer 7A is lower than a total acceptor concentration of the p-type electric field control layer 5 in a range of 2 × 10 11 to 1 × 10 12 /cm 2 .