The invention discloses a transparent electrode manufacturing method improving a device yield rate. The method includes the following steps of (1) gluing, (2) exposure and developing, (3) coating, and(3) glue removing, wherein the (1) gluing includes that a photoresist layer is coated on the function layer of a device having an electrode needing coating; the (2) exposure and developing include that a lithography edition of needed pictures is added to photoresist to conduct the exposure and the developing; the (3)coating includes that a transparent conductive oxide (TCO) film is coated on the device with the photoresist pictures; and the (4) glue removing includes that the device having the coated TCO film is placed into acetone or other solution of the photresist, and the photoresist and the TCO film coated on a protection area are washed to obtain the TCO film of the needed pictures. According to the transparent electrode manufacturing method, the damaging step of corrosion or etching is avoided, damages possibly brought about are eliminated, damages to the device caused by the corrosion process are greatly reduced, the yield of products is improved, and work capacity is reduced.