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CN103208568A 氮化物发光二极管及制作方法 无效 - 撤回

氮化物发光二极管及制作方法
摘要：
本发明公开了一种氮化物发光二极管，其包括：衬底，表面具有次微米图案，定义为生长区和非生长区；生长阻隔层，形成于所述衬底的非生长区，用于阻挡衬底非生长区的外延生长；发光外延层，形成于所述衬底的生长区并通过横向外延向所述非生长区延伸，覆盖所述生长阻隔层，包括n型层、发光层和p型层；其中，所述生长阻隔层的折射率小于发光外延层的折射率，且顺着所述衬底的次微米图案形成高低起伏之形貌，从而在增加发光二极管的取光界面的同时，提供发光外延层与取光界面的折射系数差异，提高取光效率。
摘要（英）：

The invention discloses a nitride light-emitting diode which comprises a substrate, a growth blocking layer and a light-emitting epitaxial layer. A sub micron pattern is arranged on the surface of the substrate to define a growing region and a non-growing region. The growth blocking layer is formed on the non-growing region of the substrate and is used for blocking epitaxial growth of the non-growing region of the substrate. The light-emitting epitaxial layer is formed on the growing region of the substrate and extends towards the non-growing region through transverse epitaxy to cover the growth blocking layer. The light-emitting epitaxial layer comprises an n-type layer, a light-emitting layer and a p-type layer. The refraction index of the growing blocking layer is smaller than that of the light-emitting epitaxial layer and forms high and low undulation morphology along the sub micron pattern of the substrate. Therefore, the nitride light-emitting diode provides refraction coefficient difference of the light-emitting epitaxial layer and the light-taking interface while increasing the light-taking interface, and improves light-taking efficiency.

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