The invention discloses an LED (light-emitting diode) flip chip. Different areas of the bottom surface of the flip chip are covered with a P welding electrode and an N welding electrode of the flip chip respectively; a first N ohmic contact layer is positioned in an N welding electrode coverage area; a first sunk pit of the flip chip is formed between the N welding electrode and an N semiconductor layer for allowing the first N ohmic contact layer to be contacted and communicated with the N semiconductor layer; second N ohmic contact layers are positioned in a P welding electrode coverage area, partially stretch out of the P welding electrode coverage area, and are insulated from the P welding electrode; a second sunk pit of the flip chip is formed between the P welding electrode and the N semiconductor layer for allowing the second N ohmic contact layers to be contacted and communicated with the N semiconductor layer; and the second N ohmic contact layers are insulated from the P welding electrode for avoiding short circuit, and partially stretch out of the P welding electrode coverage area for being welded. The N ohmic contact layers are distributed in the N welding electrode coverage area and the P welding electrode coverage area, so that the current of the N ohmic contact layers on the flip chip is distributed uniformly.