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发明公开
CN103364638A 硅薄膜的电导率测量方法、缺陷检测方法及缺陷检测设备 有权

硅薄膜的电导率测量方法、缺陷检测方法及缺陷检测设备
摘要：
本发明公开一种硅薄膜的电导率测量方法、缺陷检测方法及缺陷检测设备。通过硅薄膜的电导率测量方法，以在传感器和样品之间具有气隙的方式将电容式传感器放置在硅薄膜样品的上方，在关闭激发光源组件的同时，利用电容式传感器测量气隙的大小，通过开启激发光源组件，使激发光照射到硅薄膜样品上，其中激发光是紫外光，利用电容式传感器测量硅薄膜样品的电导率变化，以及通过基于气隙大小的测量结果使电导率变化归一化，来消除由于气隙的偏差而导致的测量误差。
摘要（英）：

A method of measuring conductivity of a silicon thin film, a method of detecting defects in a silicon thin film, and a silicon thin film defect detection device are disclosed. By the method of measuring conductivity of a silicon thin film, a capacitive sensor is positioned over a silicon thin film sample with an air-gap between the sensor and the sample, a size of the air-gap is measured using the capacitive sensor while an excitation light source module is turned off, an excitation light is illuminated on the silicon thin film sample by turning on the excitation light source module, where the excitation light is an ultraviolet light, a conductivity change of the silicon thin film sample is measured using the capacitive sensor, and a measurement error due to a deviation of the air-gap is eliminated by normalizing the conductivity change based on a measurement result of the size of the air-gap.

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