The invention provides a surface emitting laser device and n atomic oscillator. The surface emitting laser device includes a substrate (101), a lower reflector (102), an active layer (104), an upper reflector (106, 113), and surface emitting lasers (11-14) configured to emit light. A second phase adjustment layer (108), a contact layer (109), a first phase adjustment layer (111), and a wavelength adjustment layer (112) are successively layered from the active layer side. The total optical thickness from the active layer side of the second phase adjustment layer (108) to the midsection of the wavelength adjustment layer (112) is approximately (2N+1) /4, where represents a wavelength of light, and N represents a positive integer. The optical thickness from the active layer side of the second phase adjustment layer (108) to a midsection of the contact layer (109) is approximately N /2. At least two of the surface emitting lasers (11-14) have the wavelength adjustment layer (112) arranged at different thicknesses and are configured to emit light with different wavelengths.