The invention discloses a low-voltage and low-power-consumption amplifier based on a nanometer MOS device, and belongs to the field of analogue integrated circuits. With the development of the integrated circuit technology, the analogue circuit design based on the nanometer MOS device becomes a new challenge and a research focus. The amplifier comprises a full differential input stage composed of four PMOS tubes, a current recycling stage and a low-voltage rail-to-rail output stage, wherein an input voltage signal is converted into a current signal through the input stage, the current recycling stage is composed of two sets of current mirrors, the low-voltage rail-to-rail output stage is composed of one set of current mirrors, the output stage provides output impedance, a differential rotating single mode is adopted in a current source tube of the output stage, and the amplifier belongs to the single-end output. According to the low-voltage and low-power-consumption amplifier based on the nanometer MOS device, the bandwidth capability is accurately improved by at least three times without increasing a direct current and a domain area, and meanwhile the low-frequency gain and the large-signal slew rate are correspondingly improved. An amplifier circuit is suitable for the low-voltage environment of a nanometer MOS device circuit and can provide a large-bandwidth and a large output swing amplitude.