This solid-state imaging device has a plurality of pixels, each of which comprises a photoelectric conversion element (1). The photoelectric conversion element (1) is provided with: a photoelectric conversion layer (13) that contains a first organic semiconductor of a first conductivity type and a second organic semiconductor of a second conductivity type, while having a third organic semiconductor which is added thereto and is formed of a derivative or isomer of the first or second organic semiconductor; and first and second electrodes (12, 14) which are arranged so as to sandwich the photoelectric conversion layer.