The invention discloses a method for producing transparent conducting film glass. The method comprises the following steps: (1) introducing a gaseous-state shielding layer precursor containing silane and an oxygen source to the glass surface at a temperature ranging from 460 to 480 DEG C by taking an inert gas as a carrier in an annealing kiln, carrying out photodissociation of the gaseous-state shielding layer precursor by use of a parallel incident laser beam and thus carrying out a chemical vapor reaction to form a shielding layer which is 50-90nm thick on the glass surface; (2) in the annealing kiln and in the glass temperature range of 435-455 DEG C, introducing a gaseous-state conducting layer precursor containing pre-gasified zinc and aluminum sources and the oxygen source to the glass surface on which the shielding layer is already deposited by taking the inert gas as the carrier, and causing the photodissociation of the gaseous-state conducting layer by use of the parallel incident laser beam and thus carrying out the chemical vapor reaction to form a conducting layer which is 250-400nm thick on the glass surface. The method has the advantages that the temperatures of the coating reactions are effectively reduced so that the quality of the film can be improved, and the utilization rate of the precursor gases is increased so that the working conditions of a float line can be kept stable.