The invention provides a manufacturing method for materials on an ultrathin insulator. The manufacturing method includes the steps that (1) a first doped single crystal layer, a buffering layer, a second doped single crystal layer and a layer to be transferred are arranged on the surface of a first substrate in an epitaxy mode; (2) low-dose ions are injected preset deep below the interface of the first doped single crystal layer and the first substrate; (3) an insulating layer of a second substrate and the layer to be transferred are bonded; (4) the buffering layer and the first substrate are stripped off in an annealing mode; (5) low-dose ions are injected preset deep above the interface of the second doped single crystal layer and the buffering layer; (6) an insulating layer of a third substrate and the buffering layer are bonded; (7) the buffering layer and the layer to be transferred are stripped off in an annealing mode to obtain the two materials on the ultrathin insulator. By the adoption of the two-time injecting and stripping-off technology, while the layer to be transferred is manufactured on the ultrathin insulator, the other material (namely the buffering material) on the insulator is manufactured through stripping-off for the second time, and therefore almost no material wastage exists in the whole manufacturing process.