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发明公开
CN103985796A 电子器件 无效 - 驳回

电子器件
摘要：
本发明涉及电子器件。一种电子器件包括扩展层和形成在所述扩展层上并与之接触的第一接触层。所述第一接触层由导热晶体材料形成，所述导热晶体材料具有高于或等于有源层材料的热导率的热导率。有源层包括一个或多个III族氮化物层。第二接触层形成在所述有源层上，其中所述有源层被垂直设置在第一和第二接触层之间以形成垂直薄膜叠层。
摘要（英）：

The invention relates to an electronic device which includes a spreading layer and a first contact layer formed over and contacting the spreading layer. The first contact layer is formed from a thermally conductive crystalline material having a thermal conductivity greater than or equal to that of an active layer material. An active layer includes one or more III-nitride layers. A second contact layer is formed over the active layer, wherein the active layer is disposed vertically between the first and second contact layers to form a vertical thin film stack.

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