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发明公开
CN103996725A 太阳能电池及其制造方法 无效 - 撤回

太阳能电池及其制造方法
摘要：
公开了太阳能电池，其包括：包括p-型化合物半导体的光吸收层；和在所述光吸收层上的包括第一缓冲层和第二缓冲层的缓冲层，所述第二缓冲层在所述第一缓冲层和光吸收层之间，且所述第一缓冲层的硫化锌(ZnS)浓度大于所述第二缓冲层的ZnS浓度。还公开了制造所述太阳能电池的方法。
摘要（英）：

The invention discloses a solar energy battery, comprising a light receiving layer of a p-shaped compound semiconductor, and a buffering layer comprising the first buffering layer and a second buffering layer on the light receiving layer; the second buffering layer is positioned between the first buffering layer and the light receiving layer. The concentration of the zinc sulfide of the first buffering layer is denser than that of the zinc sulfide of the second buffering layer. The invention also discloses a method for manufacturing the solar energy battery.

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