利索-全球专利检索

  1. 登录
  2. 注册
发明公开
CN104025318A 氮化物半导体发光元件、以及氮化物半导体发光元件的制作方法 无效 - 撤回

氮化物半导体发光元件、以及氮化物半导体发光元件的制作方法
摘要：
本发明提供一种设置于半极性面上并抑制了发光所需要的偏压电压的上升的氮化物半导体发光元件以及该氮化物半导体发光元件的制作方法。在具有半极性面的主面(13a)的由六方晶类氮化物半导体构成的支撑基体上设置的发光层(17)的多重量子阱构造由阱层(17a)和阱层(17c)、以及阻挡层(17b)构成，阻挡层(17b)设置于阱层(17a)和阱层(17c)之间，阱层(17a)和阱层(17c)由InGaN构成，阱层(17a)和阱层(17c)具有处于0.15以上0.50以下的范围的铟组成，主面(13a)相对于六方晶类氮化物半导体的c面的倾斜角α处于50度以上80度以下的范围、以及130度以上170度以下的范围中的任一范围，阻挡层(17b)的膜厚的值L处于1.0nm以上4.5nm以下的范围。
摘要（英）：

Provided are: a nitride semiconductor light emitting element, which is provided on a semipolar surface, and has an increase of a bias voltage required for light emission suppressed; and a method for manufacturing the nitride semiconductor light emitting element. A multiquantum well structure of a light emitting layer (17) that is provided on a supporting base body, which has a semipolar main surface (13a), and is composed of a hexagonal nitride semiconductor, is composed of a well layer (17a), a well layer (17c), and a barrier layer (17b). The barrier layer (17b) is provided between the well layer (17a) and the well layer (17c), the well layer (17a) and the well layer (17c) are composed of InGaN, and the well layer (17a) and the well layer (17c) have an indium composition within the range of 0.15-0.50. A tilt angle (alpha) of the main surface (13a) of the hexagonal nitride semiconductor with respect to the c plane is within the range of 50-80 degrees or within the range of 130-170 degrees, and a value (L) of the film thickness of the barrier layer (17b) is within the range of 1.0-4.5 nm.

0/0