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发明公开
CN104087976A Sm-Co合金非晶磁性纳米线阵列的制备方法 失效 - 权利终止

Sm-Co合金非晶磁性纳米线阵列的制备方法
摘要：
本发明Sm-Co合金非晶磁性纳米线阵列的制备方法的技术方案，涉及钴作主要成分的非晶态合金，将用100mL去离子水配制得到的摩尔浓度配比为SmCl3·6H2O∶CoCl2·6H2O∶H3BO3∶甘氨酸∶抗坏血酸＝0.5～1.8∶2～5∶5～10∶4～8∶3～7的电解沉积液放入专用的Sm-Co合金非晶磁性纳米线沉积装置的电解沉积槽中进行纳米线的沉积，再对沉积的Sm-Co合金非晶磁性纳米线阵列进行退火处理，制得Sm-Co合金非晶磁性纳米线阵列产品。本发明方法克服了现有技术中Sm-Co合金纳米线即Sm-Co合金非晶磁性纳米线阵列沉积率低的缺陷。
摘要（英）：

The invention discloses a technical scheme of a preparation method of a Sm-Co alloy amorphous magnetic nanowire array, relates to amorphous alloy of which the main component is cobalt. The preparation method comprises the following steps: performing nanowire deposition in electrolytic deposition liquid which is prepared by using 100mL of de-ionized water and has a molar concentration ratio of SmCl3.6H2O to CoCl2.6H2O to H3BO3 to glycine to ascorbic acid being (0.5-1.8) to (2-5) to (5-10) to (4-8) to (3-7) in an electrolytic deposition tank of a special Sm-Co alloy amorphous magnetic nanowire deposition device, and annealing the deposited Sm-Co alloy amorphous magnetic nanowire array to prepare a Sm-Co alloy amorphous magnetic nanowire array product. According to the method, the defect of low deposition rate of Sm-Co alloy nanowires, namely the Sm-Co alloy amorphous magnetic nanowire array in the prior art is overcome.

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