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发明公开
CN104124152A 鳍式双极结型晶体管及其形成方法 有权

鳍式双极结型晶体管及其形成方法
摘要：
一种鳍式双极结型晶体管及其形成方法，所述鳍式双极结型晶体管包括：基底；位于所述基底上的鳍部，所述鳍部为基区；所述鳍部包括相互隔开的第一区和第二区；位于所述第一区上的集电区；位于所述第二区上的发射区。由本发明提供的方法形成的鳍式双极结型晶体管，基区与发射区之间形成的PN结具有较大的面积，该PN结面积可调，且可调范围很大。
摘要（英）：

The invention provides a finned bipolar junction transistor and a manufacturing method thereof. The finned bipolar junction transistor comprises a substrate, a fin part located on the substrate as a base region and comprising mutually separated first and second regions, a collector region located on the first region, and an emitter region located on the second region. The finned bipolar junction transistor manufactured by the method is characterized in that a PN junction formed between the base region and the emitter region has relatively large area, and the area of the PN junction is adjustable in a large range.

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