The invention provides a capacitance-type dynamic-quantity sensor capable of reducing a variation in detection sensitivity, free of peeling of an electrode or disconnection thereof, and excellent in reliability, and a manufacturing method therefor. In the capacitance-type dynamic-quantity sensor, a semiconductor substrate where an oscillator is to be formed is processed with a high precision from its front and rear sides to define minute spaces between the oscillator, and flat upper glass substrate and lower glass substrate on each of which an electrode is to be laminated, thereby reducing a variation in detection sensitivity and suppressing peeling of the electrode and disconnection thereof.