Described herein is an apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350 degrees or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9g/cm3 or greater; a hydrogen content of about 4x1022 cm-3 or less, and a transparency of about 90 percent or greater at 400-700 nm as measured by a UV-visible light spectrometer.