The invention discloses a nanometer electro-spinning tectorial membrane etching support and method for curing intracranial aneurysm. The nanometer electro-spinning tectorial membrane etching support comprises a support main body of a cylindrical net structure. Four radio-opaque first mark points are arranged at each of two ends of the support main body and are used for accurate release of the support. Two radio-opaque second mark points used for developing positioning of the support in the release process are arranged at the starting point and the stop point of a tectorial membrane in the middle section of the support main body. The nanometer electro-spinning tectorial membrane etching support further comprises a push device. The push device is arranged at one end of the support main body and comprises a lead wire and a conveying pipe. The lead wire is located in the conveying pipe, and the front end of the lead wire is connected with the support main body. According to the nanometer electro-spinning tectorial membrane etching support and method, intracranial aneurysm haemodynamics changes simply by inserting the support, the aneurysmal neck can be directly blocked to promote thrombus forming and organizing in the arterial aneurysm, accordingly the purpose of rebuilding parent arteries anatomically is achieved, and the parent arteries are kept unblocked.