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发明授权
CN104425535B 固态成像装置、固态成像装置的制造方法和电子设备 有权 转让

固态成像装置、固态成像装置的制造方法和电子设备
摘要：
一种固态成像装置包括像素，该像素包括光电转换元件、第一转移栅极和第二转移栅极，观点转换元件响应于入射光而产生电荷，第一转移栅极将来自光电转换元件的电荷转移至电荷保持部，第二转移栅极将来自电荷保持部的电荷转移至浮置扩散部。第一转移栅极包括沟槽栅极结构，其具有至少两个埋设在半导体衬底的深度方向上的沟槽栅极部，并且电荷保持部包括位于相邻的沟槽栅极部之间的半导体区域。
摘要（英）：

A solid-state imaging device includes a pixel having a photoelectric conversion element which generates a charge in response to incident light, a first transfer gate which transfers the charge from the photoelectric conversion element to a charge holding section, and a second transfer gate which transfers the charge from the charge holding section to a floating diffusion. The first transfer gate includes a trench gate structure having at least two trench gate sections embedded in a depth direction of a semiconductor substrate, and the charge holding section includes a semiconductor region positioned between adjacent trench gate sections.

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