Provided is an electrode structure such that, when layering insulating resin and a metal electrode that have different thermal expansion coefficients, generation of cracks on the metal electrode due to heating during manufacturing processes are prevented. In an electrode that is to be layered onto a semiconductor circuit substrate comprising insulating resin, the electrode structure thereof is composed of, in order to prevent generation of cracks in manufacturing processes due to the substrate having a different thermal expansion coefficient, a main electrode (70) provided with slits formed by notching a portion thereof, and an auxiliary electrode (74) that covers the slits of the main electrode. Void sections where no electrode exists can be eliminated by providing bridges, instead of slits, at portions where the slits of the main electrode and slits of the auxiliary electrodes overlap.