The invention relates to an electronic collector implementation method based on stress distribution. The method comprises the following content that (1) an electronic collecting zone is determined according to the service life and diffusion distance of photon-generated carriers of semiconductor materials; (2) three electronic mobility values are set based on the optical transformation principle according to a collecting result; (3), electronic mobility distribution corresponding to a sector region A and electronic mobility distribution corresponding to a sector region B are obtained through the set radial electronic mobility ur and annular electronic mobility utheta of the annular electronic collecting zone; (4), according to the calculated electronic mobility distribution of the sector zone A and the sector zone B, the stress distribution of the sector zone A and the sector zone B of the annular electronic collecting zone is obtained through calculation through the relation of the mobility and stress of a semiconductor; (5), the stress distribution of a zone C is obtained through calculation; (6), the stress distribution is obtained through solving, corresponding stress is applied to each zone, and an electronic collector is manufactured. The method can be widely applied to the fields of semiconductor devices, solar energy and the like.