The invention provides a manufacturing method of a resistive random access memory based on a graphene oxide. The resistive random access memory comprises a grid, a grid insulating layer, a source, a drain, an active area, a graphene layer positioned between the active area and the source and the drain, and a storage unit, wherein the storage unit comprises an upper electrode, a lower electrode and a resistive layer between the upper and lower electrodes; the resistive layer is the graphene oxide; the graphene oxide layer is formed by treating the graphene layer through an oxidation process. The oxidation process can be a remote plasma oxidation process. Through use of the graphene layer, the electrical stability and reliability of a device are enhanced. Meanwhile, through adoption of the method, the process difficulty is lowered, and the production efficiency is increased.