The invention discloses a spray header of MOCVD equipment. The spray header comprises a Zn source pipeline used for directly feeding a Zn source into a reaction chamber, an observer and an assistant gas inlet, wherein a baffling mechanism used for baffling gas fed through the assistant gas inlet is arranged at the top of the inner cavity of the spray header; a plurality of funnel-shaped gas pipes are arranged under the baffling mechanism; cooling water pipelines are arranged between the gas pipes. Due to use of the spray header disclosed by the invention, the problem of the existing spray header that a filter screen is easily blocked since reactants are heated too early and are reacted is solved. A gas pipeline system is modified structurally so that gas is conveyed to the surface of a substrate uniformly without turbulence, parasitic reaction and high-temperature parasitic sedimentation can be reduced and the film production efficiency is improved further.