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发明公开
CN104681541A 半导体装置 有权

半导体装置
摘要：
本发明提供一种半导体装置，其能够抑制在通路孔内产生空隙。半导体装置(100)具备半导体衬底(12)。半导体衬底具备表面(12a)和背面(12b)，在表面设置有晶体管(26)的源极电极(20)、栅极电极(22)及漏极电极(24)。源极电极具有上表面(20a)及下表面(20b)。到达下表面(20b)的开口设置于背面(12b)。Au层(14)覆盖开口的侧面及底面。Ni层(16)设置为在开口内覆盖Au层(14)。Au层(19)由与Ni层的材料相比对焊料的密接性更高的材料形成，以在开口内覆盖Ni层的至少一部分的方式层叠于Ni层。焊料层(32)设置为填埋开口内部，与Ni层的一部分及Au层(19)接触。
摘要（英）：

A semiconductor device includes a semiconductor substrate, a first metal layer, a barrier metal layer, and a second metal layer. The semiconductor substrate includes a front surface and a back surface. A semiconductor element and an electrode of the semiconductor element are located on the front surface. An opening in the back surface reaches a lower surface of the electrode, and the opening is defined by a side surface and a bottom surface. The first metal layer covers the side surface and the bottom surface. The barrier metal layer covers the first metal layer in the opening The second metal layer is in contact with solder in the opening and is closer to the electrode than parts of the barrier metal layer. The second metal layer is laminated on the barrier metal layer and covers at least a part of the barrier metal layer in the opening.

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