Disclosed is a transistor formation method. The transistor formation method includes that a substrate is involved and a gate structure is formed on the surface of the substrate; first doping areas are formed in the substrate on two sides of the gate structure; stress layers are formed in the substrate on two sides of the gate structure, the thickness of each stress layer is smaller than the depth of each first doping area, bottoms of the first doping areas enclose the bottoms of the stress layers, second doping areas are arranged in the stress layers, and the second doping areas and the first doping areas form a source region and a drain area. Performance of formed transistors is improved.