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发明公开
CN104733541A 导电结构及其制作方法、阵列基板、显示装置 有权

导电结构及其制作方法、阵列基板、显示装置
摘要：
本发明提供了一种导电结构及其制作方法、阵列基板、显示装置，该导电结构的制作方法包括：在基板上依次形成阻挡金属薄膜、与所述阻挡金属薄膜层叠设置的铜金属薄膜；在所述铜金属薄膜上形成预设的光刻胶图案；对所述阻挡金属薄膜以及所述铜金属薄膜进行刻蚀；对所述刻蚀后所述阻挡金属薄膜中暴露出的侧壁以及所述铜金属薄膜中暴露出的侧壁进行氧化处理；采用剥离液剥离所述光刻胶图案。本发明实施方式提供的导电结构的制作方法，通过在采用湿法剥离工艺去除导电结构上的光刻胶前，对导电结构暴露出的侧壁进行氧化处理，使侧壁形成均一的金属氧化层，在进行湿法剥离时，能够有效改善铜金属薄膜与阻挡金属薄膜之间的界面分离现象。
摘要（英）：

The invention provides an electric conduction structure, a manufacturing method thereof, an array substrate and a display device. The manufacturing method of the electric conduction structure includes the steps that a barrier metal thin film and a copper thin film are sequentially formed on a substrate and arranged in an overlapped mode; preset photoresist patterns are formed on the copper thin film; the barrier metal thin film and the copper thin film are etched; the side wall exposed out of the barrier metal thin film and the side wall exposed out of the copper thin film after etching is carried out are oxidized; the photoresist patterns are stripped off through stripping liquid. According to the manufacturing method of the electric conduction structure, before photoresist on the electric conduction structure is stripped through a wet way stripping technology, as the side walls exposed out of the electric conduction structure are oxidized, and a uniform metal oxide layer is formed on each side wall, the phenomenon of interface separation between the copper thin film and the barrier metal thin film can be effectively improved in the wet way stripping process.

公开/授权文献
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/78 .....由绝缘栅产生场效应的
H01L29/786 ......薄膜晶体管
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