Belonging to the technical field of one-dimensional semiconductor nanomaterial preparation, the invention relates to a preparation method for a growth direction controllable horizontal CdS nanowire array. The invention for the first time adopts a simple method to realize direction controllable growth of cadmium sulfide nanowires, and the length of the obtained nanowires can reach tens of micrometer, and the diameter is about 100 nanometers. The technology provided by the invention is simple and easy to control, and is convenient for mass production and application. At the same time, the process designed by the invention and the prepared finished product have important application value in the aspects of basic physics research and nanoscale functional device integration.