The invention provides a c-axis tilt gallium nitride FBAR piezoelectric mass sensor which comprises a sensitive layer, an upper electrode, a signal terminal, an earthing terminal, a c-axis tilt gallium nitride FBAR piezoelectric thin film, etching holes, a lower electrode, a Bragg reflection layer and a substrate. The signal terminal and the earthing terminal are distributed at the top of the c-axis tilt gallium nitride FBAR piezoelectric thin film. The upper electrode is connected with the signal terminal and coated with the sensitive layer. The lower electrode is connected with the earthing terminal through the etching holes formed in the piezoelectric thin film. The lower electrode is arranged on the Bragg reflection layer in a deposition mode. The Bragg reflection layer is arranged on the substrate in a deposition mode. According to the c-axis tilt gallium nitride FBAR piezoelectric mass sensor, the c-axis tilt gallium nitride piezoelectric thin film is adopted for the piezoelectric thin film, certain c-axis inclination angle is preferred, and the mass sensor can normally work under a humidity environment or a liquid phase environment.