A silicon carbide power component comprises a silicon carbide substrate, a power component structure and a terminal structure. The silicon carbide substrate comprises a drift layer, and the drift layer with first conductivity comprises an active area and a terminal area. The power component structure is arranged in the active area. The terminal structure with second conductivity is arranged in the terminal area, and comprises at least one first doped ring and at least one second doped ring, wherein the first doped ring surrounds the power component structure and is adjacent to the power component structure, and the second doped ring surrounds the first doped ring. The first doped concentration of the first doped ring is lower than the doped concentration of the second doped ring, and the first doped depth of the first doped ring is greater than the doped depth of the second doped ring, and thus, the collapse voltage of the silicon carbide power component is improved.