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CN104812504B 电容性微加工换能器和制造所述电容性微加工换能器的方法 有权

电容性微加工换能器和制造所述电容性微加工换能器的方法
Abstract:
本发明涉及一种制造电容性微加工换能器(100)、尤其是CMUT的方法，所述方法包括：将第一电极层(10)沉积在基板(1)上，将第一介电薄膜(20)沉积在所述第一电极层(10)上，将牺牲层(30)沉积在所述第一介电薄膜(20)上，所述牺牲层(30)可移除以形成所述换能器的腔体(35)，将第二介电薄膜(40)沉积在所述牺牲层(30)上，将第二电极层(50)沉积在所述第二介电薄膜(40)上，以及图案化所述沉积层和薄膜(10、20、30、40、50)中的至少一个，其中所述沉积步骤是通过原子层沉积来执行的。本发明还涉及一种通过此方法制造的电容性微加工换能器、尤其是CMUT。
Abstract(English):

The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

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